features trenchfet power mosfet plus current sense new low thermal resistance package applications automotive industrial SUM60N08-07C vishay siliconix document number: 71834 s-03076?rev. c, 03-feb-03 www.vishay.com 1 n-channel 75-v (d-s) mosfet with sense terminal product summary v (br)dss (v) r ds(on) ( ) i d (a) 75 0.007 @ v gs = 10 v 60 a d (tab, 3) g s (5) n-channel mosfet d 2 pak-5 s gd kelvin 5 1 3 24 sense (1) (4) kelvin (2) sense absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 75 gate-source voltage v gs 20 v d t c = 25 c 60 a continuous drain current (t j = 175 c) d t c = 100 c i d 60 a pulsed drain current i dm 240 a continous diode current (diode conduction) d i s 60 a avalanche current i ar 60 a repetitive avalanche energy b l = 0.1 mh e ar 180 mj t c = 25 c 300 c maximum power dissipation a t a = 25 c p d 3.75 d w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient d pcb mount d r thja 40 junction-to-case r thjc 0.5 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
SUM60N08-07C vishay siliconix www.vishay.com 2 document number: 71834 s-03076 ? rev. c, 03-feb-03 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 75 gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 60 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 dss v ds = 60 v, v gs = 0 v, t j = 175 c 500 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 25 a 0.0054 0.007 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 25 a, t j = 125 c 0.010 ds(on) v gs = 10 v, i d = 25 a, t j = 175 c 0.013 forward transconductance a g fs v ds = 15 v, i d = 20 a 100 s dynamic b input capacitance c iss 6500 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 920 pf reversen transfer capacitance c rss 400 total gate charge c q g 110 150 gate-source charge c q gs v ds = 35 v, v gs = 10 v, i d = 60 a 30 nc gate-drain charge c q gd ds gs d 30 turn-on delay time c t d(on) 15 20 rise time c t r v dd = 35 v, r l = 0.6 130 200 turn-off delay time c t d(off) v dd = 35 v, r l = 0.6 i d 60 a, v gen = 10 v, r g = 2.5 75 115 ns fall time c t f d gen g 120 180 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 60 pulsed current i sm 240 a forward voltage a v sd i f = 60 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 75 115 ns peak reverse recovery current i rm(rec) i f = 60 a, di/dt = 100 a/ s 3.5 5 a reverse recovery charge q rr f 0.13 0.29 c current sense characteristics current sensing ratio r i d = 3.5 a, v gss = 10 v, r sense = 2.0 2270 2370 2470 mirror active resistance r m(on) v gs = 10 v, i d = 10 ma 10 notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUM60N08-07C vishay siliconix document number: 71834 s-03076 ? rev. c, 03-feb-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2000 4000 6000 8000 10000 0 1530456075 0 4 8 12 16 20 0 50 100 150 200 0 50 100 150 200 250 0 153045607590 0.000 0.005 0.010 0.015 0.020 0 20 40 60 80 100 120 0 40 80 120 160 200 0123456 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs v gs - gate-to-source voltage (v) - transconductance (s) g fs 25 c -55 c t c = 125 c v gs = 35 v i d = 60 a v gs = 10 thru 6 v v gs = 10 v c iss c oss t c = - 55 c 25 c 125 c 4 v - on-resistance ( r ds(on) ) - drain current (a) i d 5 v c rss
SUM60N08-07C vishay siliconix www.vishay.com 4 document number: 71834 s-03076 ? rev. c, 03-feb-03 typical characteristics (25 c unless noted) 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.2 0.6 0.4 1.0 1.2 v gs = 10 v i d = 30 a t j = 25 c (normalized) - on-resistance ( r ds(on) ) 0 0.8 t j = 150 c drain source breakdown vs. junction temperature 70 76 82 88 94 100 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) (v) v (br)dss i d = 10 ma thermal ratings 0 15 30 45 60 75 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c - case temperature ( c) - drain current (a) i d - drain current (a) i d 1 100 ms dc 10 ms 1 ms 100 s 10 s
SUM60N08-07C vishay siliconix document number: 71834 s-03076 ? rev. c, 03-feb-03 www.vishay.com 5 thermal ratings normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 duty cycle = 0.5 0.02 single pulse typical characteristics (25 c unless noted) sense die 0 5 10 15 20 0.00 0.02 0.04 0.06 0.08 0.10 on-resistance vs. sense current i sense (a) - on-resistance ( r ds(on) ) 0 1000 2000 3000 4000 5000 048121620 current ratio (i (main)/is ) vs. gate-source voltage (figure 1) ratio 0 10 20 30 40 50 0246810 on-resistance vs. gate-source voltage - on-resistance ( r ds(on) ) v gs = 10 v v gs - gate-to-source voltage (v) v gs - gate-to-source voltage (v) i d = 10 ma r s = 6 r s = 5 r s = 2 r s = 1 g v g sense s kelvin r s figure 1
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